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1 W CW reliable λ=730 nm aluminium-free active layer diode laser

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4 Author(s)
Rusli, S. ; Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA ; Al-Muhanna, A. ; Earles, T. ; Mawst, L.J.

1 W continuous wave (CW) reliable operation (~1000 h) in large transverse spot-size (d/T=0.55 μm), compressively strained, InGaAsP (λ=0.73 μm)-active region diode lasers is demonstrated. The use of tensile-strained InGaP barrier layers provides strain-compensation and results in a weak temperature sensitivity for the threshold current (T0=125 K) and external differential quantum efficiency (T1=410 K)

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Electronics Letters  (Volume:36 ,  Issue: 7 )