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Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz

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1 Author(s)
Judaschke, R. ; Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany

In this paper, InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator, which analyzes the device under both conditions: impressed terminal voltage and realistic load impedances. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 4 )