By Topic

Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
R. Judaschke ; Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany

In this paper, InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator, which analyzes the device under both conditions: impressed terminal voltage and realistic load impedances. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:48 ,  Issue: 4 )