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A low-current and low-distortion wideband amplifier using 0.2-μm gate MODFET fabricated by using phase-shift lithography

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8 Author(s)
Ishida, H. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Miyatsuji, Kazuo ; Tanaka, T. ; Takenaka, H.
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We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 mA from 100 MHz to 3 GHz. The fabricated integrated circuit (IC) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present IC employs a MODFET with 0.2-μm gate fabricated by using a phase-shift lithography technique

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 5 )