By Topic

Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. B. Roldan ; Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain ; F. Gamiz ; J. A. Lopez-Villanueva ; P. Cartujo-Cassinello

We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

Published in:

IEEE Electron Device Letters  (Volume:21 ,  Issue: 5 )