Cart (Loading....) | Create Account
Close category search window
 

A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Garner, D.M. ; Dept. of Eng., Cambridge Univ., UK ; Chen, Y. ; Sabesan, L. ; Amaratunga, G.A.J.
more authors

A flash EEPROM suitable for integration within power integrated circuits (PIC's) is presented. The EEPROM cell uses a trench floating gate to give a large gate charge while using no more silicon area than a conventional flash EEPROM cell. The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater than ten years at a reading voltage of V/sub D/=2.2 V.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )

Date of Publication:

May 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.