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A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

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8 Author(s)
Garner, D.M. ; Dept. of Eng., Cambridge Univ., UK ; Chen, Y. ; Sabesan, L. ; Amaratunga, G.A.J.
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A flash EEPROM suitable for integration within power integrated circuits (PIC's) is presented. The EEPROM cell uses a trench floating gate to give a large gate charge while using no more silicon area than a conventional flash EEPROM cell. The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater than ten years at a reading voltage of V/sub D/=2.2 V.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )

Date of Publication:

May 2000

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