Cart (Loading....) | Create Account
Close category search window

A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhao, Y.S. ; Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA ; Jensen, C.L. ; Chuang, R.W. ; Lee, H.P.
more authors

We report an easy-to-implement wafer-level electroluminescence characterization technique for InGaN/GaN light-emitting diodes (LED's) epi-wafers by means of multiple electrical probes. By first damaging the p-n junctions of the LED epilayer at localized spots, diode-like current versus voltage characteristics and emission spectra can be obtained at injection currents as high as 100 mA. This allows a relative but reliable comparison of device-related parameters such as differential quantum efficiency, leakage current, and series resistance among LED epi-wafers.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )

Date of Publication:

May 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.