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A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

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6 Author(s)
Zhao, Y.S. ; Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA ; Jensen, C.L. ; Chuang, R.W. ; Lee, H.P.
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We report an easy-to-implement wafer-level electroluminescence characterization technique for InGaN/GaN light-emitting diodes (LED's) epi-wafers by means of multiple electrical probes. By first damaging the p-n junctions of the LED epilayer at localized spots, diode-like current versus voltage characteristics and emission spectra can be obtained at injection currents as high as 100 mA. This allows a relative but reliable comparison of device-related parameters such as differential quantum efficiency, leakage current, and series resistance among LED epi-wafers.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )

Date of Publication:

May 2000

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