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On the origin of the dispersion of erased threshold voltages in flash EEPROM memory cells

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2 Author(s)
Essemi, D. ; Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy ; Ricco, B.

This work investigates the origin of the dispersion of tunnel-erased threshold voltages (VT) in flash EEPROM memory cells. A clear correlation between cell-to-cell variations of tunnel current IT and dispersion of erased VT is demonstrated by looking at the IT characteristics and the erasing characteristics corresponding to channel and source injection as well as at the dependence of IT and VT dispersion on device area and tunnel polarity. Experimental evidence is provided that nonuniform injection at poly-Si/SiO2 interface is a major cause of erased VT dispersion

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 5 )

Date of Publication:

May 2000

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