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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:47 Issue:5 Help

Fabrication of strained and double heterojunction InxGa 1-xP/In0.2Ga0.8As high electron mobility transistors grown by solid-source molecular beam epitaxy

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5 Author(s)
Yoon, S.F. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Gay, B.P. ; Zheng, H.Q. ; Kam, H.T.
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Double heterojunction (DH) In0.48Ga0.52P/In 0.20Ga0.80As and strained single heterojunction (SSH) In0.40Ga0.60P/In0.20Ga0.80 As/GaAs high electron mobility transistor (HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The DC and RF performance of the SSH-HEMT and DH-HEMT were compared with the single heterojunction (SH) HEMT. The results show a significant improvement in device characteristics in the SSH-HEMT with In0.40Ga0.60P spacer and Schottky layer, due to better carrier confinement in the channel. The SSH-HEMT with 0.35-μm gate length exhibits a peak transconductance (Gm ) of 470 mS/mm, maximum drain current (IDSmax) of 550 mA/mm, and current gain cut-off frequency (fT) of 50 GHz. These values are approximately 7%, 10% and 25% higher than the respective values for a DH-HEMT of identical gate length

Published in:
Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 5 )

Date of Publication: May 2000

Page(s):
1115 - 1117
ISSN :
0018-9383
INSPEC Accession Number:
6606988
Digital Object Identifier :
10.1109/16.841249
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 2000
Sponsored by :
IEEE Electron Devices Society

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