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Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

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5 Author(s)
E. S. Daniel ; Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA ; X. Cartoixa ; W. R. Frensley ; D. Z. -Y. Ting
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We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO2/Si structure and an Al/SiO2/n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions

Published in:

IEEE Transactions on Electron Devices  (Volume:47 ,  Issue: 5 )