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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:47 Issue:5 Help

An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS

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1 Author(s)
Sang-Koo Chung ; Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea

An analytical model for the breakdown voltage of the surface implanted silicon-on-insulator (SOI) REduced SURface Field (RESURP) LDMOS is presented, which allows useful design curves of breakdown voltage in terms of the device parameters, including the substrate bias voltage. Improvement on both the breakdown voltage and the on-resistance of the device due to the surface implantation is demonstrated. Numerical simulations are shown to support the analytical results

Published in:
Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 5 )

Date of Publication: May 2000

Page(s):
1006 - 1009
ISSN :
0018-9383
INSPEC Accession Number:
6606972
Digital Object Identifier :
10.1109/16.841233
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 2000
Sponsored by :
IEEE Electron Devices Society

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