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640×486 long-wavelength two-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera

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13 Author(s)
Gunapala, S.D. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Bandara, S.V. ; Singh, A. ; Liu, John K.
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We have designed and fabricated an optimized long-wavelength/very-long wavelength two-color quantum well infrared photodetector (QWIP) device structure. The device structure was grown on a 3-in semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The wafer was processed into several 640×486 format monolithically integrated 8-9 and 14-15 μm two-color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640×486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar for electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 μm detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature for 300 K background with f/2 cold stop. The 14-15 μm detectors of the FPA reaches BLIP at 40 K operating temperature under the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP FPA in terms of quantum efficiency, detectivity, noise equivalent temperature difference (NEΔT), uniformity, and operability

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 5 )

Date of Publication:

May 2000

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