By Topic

Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Degerli, Y. ; Ecole Nat. Superieure de l''Astronaut. et de l''Espace, Toulouse, France ; Lavernhe, F. ; Magnan, P. ; Farre, J.A.

In this paper, analytical noise analysis of correlated double sampling (CDS) readout circuits used in CMOS active pixel image sensors is presented. Both low-frequency noise and thermal noise are considered. The results allow the computation of the output RMS noise versus MOS transistor dimensions with the help of SPICE-based circuit simulators. The reset noise, the influence of floating diffusion capacitance on output noise and the detector charge-to-voltage conversion gain are also considered. Test circuits were fabricated using a standard 0.7 μm CMOS process to validate the results. The analytical noise analysis in this paper emphasizes the computation of the output variance, and not the output noise spectrum, as more suitable to CDS operation. The theoretical results are compared with the experimental data

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 5 )