Referenced Items are not available for this document.
The authors have investigated the selective growth of GaAs/AlGaAs MQW PIN diodes by atmospheric pressure MOCVD. A patterned spin-on silica film was used to restrict single-crystal growth to the exposed areas of the substrate. It was found that high-quality material can be grown by selective area epitaxy although edge effects currently limit the device performance
Published in:
Electronics Letters
(Volume:24
,
Issue:
14
)
Date of Publication: 7 Jul 1988
- Page(s):
- 896 - 898
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3231303
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 7 Jul 1988
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
