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GaN/AlGaN high electron mobility transistors with fτ of 110 GHz

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7 Author(s)
Micovic, M. ; LLC, HRL Labs., Malibu, CA, USA ; Nguyen, N.X. ; Janke, P. ; Wong, W.-S.
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The performance of 50 nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2 A/mm, an extrinsic fτ of 110 GHz and an fmax of over 140 GHz. The fτ of 110 GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record

Published in:

Electronics Letters  (Volume:36 ,  Issue: 4 )

Date of Publication:

17 Feb 2000

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