By Topic

Electrical characterisation of short gate In0.60Ga0.40As-In0.36Al0.64 As0.84Sb0.16 high electron mobility transistors on InP substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Micovic, M. ; HRL Labs. LLC, Malibu, CA, USA ; Matloubian, M. ; Hu, M. ; Harvey, D.S.
more authors

An investigation into the DC and RF performance of MBE-grown In 0.36Al0.64As0.84Sb0.16/In 0.52Al0.48As/In0.60Ga0.40As HEMTS on InP substrate is presented. A composite InAlAsSb Schottky barrier is used to enhance the carrier confinement in the channel. Devices exhibit a drain current of 850 mA/mm, an extrinsic gm of 1.22 S/mm and an fτ of 240 GHz. This is the highest f τ to date for an InAlAsSb barrier HEMT

Published in:

Electronics Letters  (Volume:36 ,  Issue: 4 )