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Physically-based RF model for metal-oxide-metal capacitors

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7 Author(s)
Chunqi Geng ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; Kok Wai Chew ; Kiat Seng Yeo ; Do, A.V.
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A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model

Published in:

Electronics Letters  (Volume:36 ,  Issue: 5 )

Date of Publication:

2 Mar 2000

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