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Power reduction techniques for a 1-Mb ECL-CMOS SRAM with an access time of 550 ps and an operating frequency of 900 MHz

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12 Author(s)
Ohhata, K. ; Hitachi Device Eng. Co. Ltd., Tokyo, Japan ; Arakawa, F. ; Kusunoki, T. ; Nambu, H.
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This paper describes power reduction circuit techniques in an ultra-high-speed emitter-coupled logic (ECL)-CMOS SRAM. Introduction of a 0.25-/spl mu/m MOS transistor allows a Y decoder and a bit-line driver to be composed of CMOS circuits, resulting in a power reduction of 34%. Moreover, a variable-impedance load has been proposed to reduce cycle time. A 1-Mb ECL-CMOS SRAM was developed by using these circuit techniques and 0.2-/spl mu/m BiCMOS technology. The fabricated SRAM has an ultrafast access time of 550 ps and a high operating frequency of 900 MHz with a power dissipation of 43 W.

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Solid-State Circuits, IEEE Journal of  (Volume:35 ,  Issue: 4 )