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A 900 MHz SOI fully-integrated RF power amplifier for wireless transceivers

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5 Author(s)
M. Kumar ; Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong ; Yue Tan ; Johnny Sin ; Longxing Shi
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This 900 MHz fully-integrated power amplifier (IPA) for the first time uses SOI lateral double-diffused MOS transistors (LDMOSTs) and high-Q on-chip inductors. The IPA uses a 1.5 /spl mu/m LDMOS (0.35 /spl mu/m channel length 3.85 /spl mu/m drift length 4.5 GHz f/sub T/, 20 V breakdown) technology, which is compatible with CMOS and BJT for baseband and receiver functions. This makes it suitable for single-chip transceiver application. The IPA delivers +23 dBm output power with 16 dB gain and 49% power added efficiency (PAE) at 900 MHz, and is suitable for mobile phone handset application.

Published in:

Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International

Date of Conference:

9-9 Feb. 2000