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A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

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7 Author(s)
Scheuerlein, R. ; IBM Almaden Res. Center, San Jose, CA, USA ; Gallagher, W. ; Parkin, S. ; Lee, A.
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Magnetic random access memory (MRAM) offers an alternative approach to fast low-power non-volatile VLSI memory. MRAM has been pursued for more than 10 years as a robust non-volatile memory for space applications. The magnetic tunnel junction (MTJ) MRAM is dramatically different and achieves four orders of magnitude better bandwidth to sense power ratio by utilizing a high resistance and high magneto-resistance (MR) MTJ and including a FET switch in each cell. Non-volatile storage and 10 ns performance are demonstrated in 1 kb arrays. Read and write on-chip power at 2.5 V and 100 MHz are 5 mW and 40 mW respectively.

Published in:

Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International

Date of Conference:

9-9 Feb. 2000