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Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition

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4 Author(s)
W. Skorupa ; Central Inst. for Nucl. Res., Acad. of Sci., Dresden, East Germany ; M. Voelskow ; J. Matthai ; P. Knothe

Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400 degrees C after preamorphisation of the transition region layer/substrate. In this manner, a layer with a thickness of 400 nm was recrystallised by implanting silicon ions at 330 keV with a dose of about 1*10/sup 17/ cm/sup -2/.<>

Published in:

Electronics Letters  (Volume:24 ,  Issue: 14 )