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Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition

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4 Author(s)
Skorupa, W. ; Central Inst. for Nucl. Res., Acad. of Sci., Dresden, East Germany ; Voelskow, M. ; Matthai, J. ; Knothe, P.

Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400°C after preamorphisation of the transition region layer/substrate. In this manner, a layer with a thickness of 400 nm was recrystallised by implanting silicon ions at 330 keV with a dose of about 1×1017 cm-2

Published in:

Electronics Letters  (Volume:24 ,  Issue: 14 )

Date of Publication:

7 Jul 1988

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