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In situ characterization of CMOS post-process micromachining

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2 Author(s)
B. Warneke ; Sensor & Actuator Center, California Univ., Berkeley, CA, USA ; K. S. J. Pister

We have developed and demonstrated a new methodology for in situ monitoring and characterization of CMOS post-process micromachining utilizing integrated circuits and micromachine test-structures. In our demonstration, the circuits provide automated readout of N-well resistors surrounding each of the 140 test pit structures at up to 14,000 samples per second per device during the post-process silicon etch, and thus also provide etch progress and end point determination without extra analytical equipment. Pit sizes, surrounding layers, and topology are examined with this technique

Published in:

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Date of Conference:

23-27 Jan 2000