Referenced Items are not available for this document.
A new thermal infrared detector using temperature characteristics of a diode is proposed and developed. Micromachined isolated silicon diode for IR detection (MISIR) utilizes electrochemical etching technique to achieve the thermal isolation of the diode. Very high dependence on the junction temperature of the diode enables high responsivity of the MISIR and electrochemical etching provides effective isolation with simple and low-cost process. The fabricated MISIR exhibits the detectivity of 1.2×1010 (cm Hz½/W) under air ambient at room temperature
Published in:
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Date of Conference: 23-27 Jan 2000
- Page(s):
- 102 - 107
- Meeting Date :
- 23 Jan 2000-27 Jan 2000
- ISSN :
- 1084-6999
- Print ISBN:
- 0-7803-5273-4
- INSPEC Accession Number:
- 6636008
- Conference Location :
- Miyazaki
- Digital Object Identifier :
- 10.1109/MEMSYS.2000.838498
- Product Type:
- Conference Publications
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