By Topic

On the optimization of InGaAs-InAlAs quantum-well structures for electroabsorption modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pamplona Pires, M. ; Lab. de Semicond., Pontificia Univ. Catolica do Rio de Janeiro, Brazil ; Lustoza de Souza, P. ; Yavich, B. ; Pereira, R.G.
more authors

Several InGaAs-InAlAs multiple quantum-well structures grown by metalorganic vapor phase epitaxy (MOVPE), with various Ga content and quantum-well width, have been investigated for electroabsorption modulators (EAM's). The light-hole heavy-hole splitting, the chirp parameter, the insertion loss and the figure of merit /spl Gamma//spl Delta//spl alpha//F of the different InGaAs-InAlAs structures have been evaluated with photocurrent, photoluminescence, absorption and X-ray measurements. It was then possible to experimentally study the influence of different parameters of the multiple quantum-well structures on the device performance. The use of tensile strained barriers are believed to be responsible for the improvement in the figure of merit. Structures with unresolved light-hole and heavy-hole transitions, with negligible chirp, with adequate insertion loss and with extremely high values for /spl Gamma//spl Delta//spl alpha//F have been obtained, however, not simultaneously.

Published in:

Lightwave Technology, Journal of  (Volume:18 ,  Issue: 4 )