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A temperature-dependent SOI MOSFET model for high-temperature application (27 °C-300 °C)

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2 Author(s)
D. -S. Jeon ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; D. E. Burk

A temperature-dependent model for long-channel silicon-on-insulator (SOI) MOSFETs for use in the temperature range 27 °C-300 °C, suitable for circuit simulators such as SPICE, is presented. The model physically accounts for the temperature-dependent effects in SOI MOSFETs (such as threshold-voltage reduction, increase of leakage current, decrease of generation due to impact ionization, and channel mobility degradation with increase of temperature) which are influenced by the uniqueness of SOI device structure, i.e. the back gate and the floating film body. The model is verified by the good agreement of the simulations with the experimental data. The model is implemented in SPICE2 to be used for circuit and device CAD. Simple SOI CMOS circuits are successfully simulated at different temperatures

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 9 )