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GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics

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3 Author(s)
K. Mochizuki ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; R. J. Welty ; P. M. Asbeck

Collector-up GaInP/GaAs heterojunction bipolar transistors with a 10 nm-thick GaInP tunnel layer, which prevents the flow of holes at the base-collector junction while allowing the electrons to flow, have been realised which have current-voltage characteristics with almost zero offset (5 to 10 mV) and a very small knee voltage of 0.34 V at 0.5 kA/cm 2. These characteristics make the transistors attractive candidates for high-efficiency high power amplifiers

Published in:

Electronics Letters  (Volume:36 ,  Issue: 3 )