A new low cost method is presented for measuring the input-output AM/AM and AM/PM characteristics of an RF or microwave power amplifier at constant junction temperature (Tj). A thermal model of a bipolar junction transistor (BJT) RF power device is used to estimate T j during the power sweep of a standard network analyser
Published in:
Electronics Letters
(Volume:36
,
Issue:
3
)
Date of Publication: 3 Feb 2000