By Topic

25 GHz MMIC oscillator fabricated using commercial SiGe-HBT process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kuhnert, H. ; Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany ; Heinrich, W. ; Schwerzel, W. ; Schuppen, A.

Monolithically integrated 17 and 25 GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using the commercially available TEMIC SiGe process. The oscillators deliver 8 dBm output power at 17 GHz and 1.2 dBm at 25 GHz with phase noise <-90 dBc/Hz at 100 kHz offset, which are record values for MMICs on low-resistivity silicon substrate

Published in:

Electronics Letters  (Volume:36 ,  Issue: 3 )