Cart (Loading....) | Create Account
Close category search window
 

Base current instability of AlGaAs/GaAs HBTs operated at low voltages

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Liou, J.J. ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA ; Rezazadeh, A.A.

This paper provides an analysis of the physical mechanisms underlying the long-term base current instability the AlGaAs/GaAs heterojunction bipolar transistor (HBT). Which a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT liability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current stabilities taking place in the low-voltage region is presented and discussed

Published in:

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Date of Conference:

1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.