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Base current instability of AlGaAs/GaAs HBTs operated at low voltages

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2 Author(s)
Liou, J.J. ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA ; Rezazadeh, A.A.

This paper provides an analysis of the physical mechanisms underlying the long-term base current instability the AlGaAs/GaAs heterojunction bipolar transistor (HBT). Which a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT liability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current stabilities taking place in the low-voltage region is presented and discussed

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Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

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