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Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth

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4 Author(s)
Koch, T.L. ; AT&T Bell Labs., Holmdel, NJ ; Corvini, P.J. ; Koren, U. ; Tsang, W.T.

The authors report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (σ~2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications

Published in:

Electronics Letters  (Volume:24 ,  Issue: 13 )

Date of Publication:

23 Jun 1988

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