Cart (Loading....) | Create Account
Close category search window

Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Koch, T.L. ; AT&T Bell Labs., Holmdel, NJ ; Corvini, P.J. ; Koren, U. ; Tsang, W.T.

The authors report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (σ~2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications

Published in:

Electronics Letters  (Volume:24 ,  Issue: 13 )

Date of Publication:

23 Jun 1988

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.