By Topic

Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bidnyk, S. ; Dept. of Phys., Oklahoma State Univ., Stillwater, OK, USA ; Schmidt, T.J. ; Little, B.D. ; Krasinski, J.
more authors

Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.

Published in:

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Date of Conference:

28-28 May 1999