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Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.