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Computer model of the electron-beam excited XeF(B-X ) laser

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6 Author(s)
Abarenov, A.V. ; Dept. of Microelectron., Moscow State Univ., USSR ; Persiantsev, I.G. ; Rakhimov, A.T. ; Rebrick, S.P.
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The authors report results on the computer simulation of electron-beam pumped XeF lasers user common conditions, as well as under elevated temperature and high pumping rates that are known to improve laser performance. The Boltzmann equation for the electron energy distribution function and the chemical kinetics equations were solved in a consistent manner. The model took into account five vibrational levels of the electronic B state and seven levels for the C and X states of the XeF molecule. The model used gives reasonable agreement with the results of small signal gain measurements. A method of taking into account the finite rate of rotational relaxation makes it possible to obtain time dependencies of the lasing power in different spectral bands that qualitatively agree with those measured in experiments at different temperatures and pump rates

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 7 )