Cart (Loading....) | Create Account
Close category search window

Lock-in holography using optically-addressed multiple quantum well spatial light modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Rabinovich, W.S. ; Opt. Sci. Div., U.S. Naval Res. Lab., Washington, DC, USA ; Mahon, R. ; Bowman, S.R. ; Katzer, D.S.
more authors

Summary form only given. Perpendicular field multiple quantum well optically addressed spatial light modulators (MQW OASLMs) have been shown to exhibit high speed, resolution and sensitivity to light. They have been applied to optical correlation and non-destructive evaluation (NDE) of materials. One drawback of these devices is that their response saturates at high writing intensities. This saturation intensity is a function of the device's material parameters and the cycle time of the ac voltage that is applied to them. It is possible to overcome this problem by using the ability of perpendicular field MQW OASLMs to perform rapid image subtraction. Under the proper conditions, the image retained in an MQW OASLM after one complete voltage cycle is the difference of the image on the writing beams on the positive and negative cycles of the voltage. By synchronizing the coherent writing beams with the applied voltage so that they are on only during the positive (or negative) part of the cycle it is possible, over many cycles, to build up a strong hologram even when an incoherent (but not temporally modulated) background field much stronger than the writing beam is present. We performed this experiment using a reflective mode PIN GaAs/AlGaAs MQW OASLM.

Published in:

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Date of Conference:

28-28 May 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.