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High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm

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9 Author(s)
Erbert, G. ; Ferdinand-Braun-Inst. fuer Hoechstfrequenztech., Berlin, Germany ; Bugge, F. ; Knauer, A. ; Maege, J.
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Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.

Published in:

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Date of Conference:

28-28 May 1999