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DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs

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3 Author(s)
Gueissaz, F. ; Inst. de Micro- et Optoelectron, Ecole Polytech. Federale de Lausanne, Switzerland ; Houdre, R. ; Ilegems, M.

DC and microwave measurements on 0.7 mu m single-gate (SG) and dual-gate (DG) In0.52Al0.48As/In0.53Ga0.47As planar doped two-dimensional electron gas field-effect transistors (TEGFETs) are reported. The DG devices show a large increase of the gm to gD ratios, which are as high as 100 at gm=380 mS/mm, compared with 12 at 420 mS/mm for the single gate (SG) devices on the same chip, as well as 6 dB improvement in the RF power gain compared with their SG counterparts.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 8 )