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A semiconductor laser is proposed which has an optical active region consisting of an 8 nm thick Al0.20Ga0.65In0.15As/Al0.20Ga0.80As strained single quantum well. The spectral emission peak of this quantum well is situated between 814 and 818 nm. The optical confinement is achieved using a standard graded refractive index separate confinement heterostructure optimised for the emission wavelength of the quantum well. Preliminary results show these lasers to have a threshold current of 18 mA.
Date of Publication: 11 April 1991