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High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

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3 Author(s)
J. K. Twynam ; Central Res. Labs., Sharp Corp., Nara, Japan ; H. Sato ; T. Kinosada

High-performance HBTs with a carbon-doped base layer (p=4*1019 cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains hFE=50 and fT and fmax values of 42 GHz and 117 GHz, respectively, are reported.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 2 )