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High-performance HBTs with a carbon-doped base layer (p=4*1019 cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains hFE=50 and fT and fmax values of 42 GHz and 117 GHz, respectively, are reported.
Date of Publication: 17 Jan. 1991