Referenced Items are not available for this document.
High-performance HBTs with a carbon-doped base layer (p=4*1019 cm-3) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains hFE=50 and fT and fmax values of 42 GHz and 117 GHz, respectively, are reported.
Published in:
Electronics Letters
(Volume:27
,
Issue:
2
)
Date of Publication: 17 Jan. 1991
- Page(s):
- 141 - 142
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3846743
- Digital Object Identifier :
- 10.1049/el:19910092
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 17 Jan. 1991
- Sponsored by :
- Institution of Engineering and Technology
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