By Topic

Simple method to extract gate voltage dependent source/drain resistance in MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lee, J.I. ; Opt. Electron. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea ; Lee, M.B. ; Lee, Y.J. ; Han, I.K.
more authors

A simple and new method is presented and applied to a set of short channel LDD MOSFETs to extract gate-voltage dependent source/drain resistance in the linear region. The method utilises a well-known expression for the drain current in the strong inversion regime.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 21 )