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For original paper see ibid., vol. 45, p. 218-23 (1998). This correspondence discusses two practical aspects which have to be included in the storage time analysis of the above referenced paper. First of all, the value of the diffusion current is overestimated by three orders of magnitude in calculating the log time dependence. Secondly, in the total junction leakage current, the generation current near the edges of the n/sup +/-Si/SiO/sub 2/ interface is a more important factor than the bulk generation current. Inclusion of those two practical aspects could lead to a different prediction of storage times in future DRAM cells with thin dielectrics.