By Topic

A three terminal varactor for RF IC's in standard CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
F. Svelto ; Dipt. di Ingegneria, Bergamo Univ., Dalmine, Italy ; S. Manzini ; R. Castello

A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC's. Prototypes, realized in a 0.35 μm standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO's in highly integrated CMOS transceivers

Published in:

IEEE Transactions on Electron Devices  (Volume:47 ,  Issue: 4 )