By Topic

Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sune, J. ; Dept. d''Enginyeria Electr., Univ. Autonoma de Barcelona, Spain ; Mura, G. ; Miranda, Enrique

By means of a statistical analysis, the soft breakdown and hard breakdown of thin gate SiO/sub 2/ films in MOS devices are shown to have a common physical origin. Being triggered by identical microscopic defects, these breakdown modes can be actually considered to be the same failure mechanism. In particular, it is shown that the soft breakdown conduction path is not precursor of the final hard breakdown event, which generally appears at a different spatial location. The huge differences between the soft and hard post-breakdown current-voltage (I-V) characteristics are attributed to differences in the breakdown spot area and to point contact energy funneling effects.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 4 )