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Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

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7 Author(s)
Yee Chia Yee ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Subramanian, Vivek ; Kedzierski, J. ; Peiqi Xuan
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We report the concept and demonstration of a nanoscale ultra-thin-body silicon on-insulator (SOI) P-channel MOSFET with a Si/sub 1-x/Ge/sub x//Si heterostructure channel. First, a novel lateral solid-phase epitaxy process is employed to form an ultra-thin-body that suppresses the short-channel effects. Negligible threshold voltage roll-off is observed down to a channel length of 50 nm. Second, a selective silicon implant that breaks up the interfacial oxide is shown to facilitate unilateral crystallization to form a single crystalline channel. Third, the incorporation of SiGe in the channel resulted in a 70% enhancement in the drive current.

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Electron Device Letters, IEEE  (Volume:21 ,  Issue: 4 )