Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

We demonstrate a novel Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15/-In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm/sup 2/ were obtained at room temperature.