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Au-InP Schottky junctions are formed on a surface treated by ArF excimer laser photolytic process of phosphine (PH3) gas. The Schottky junction has a metal-insulator-semiconductor (MIS) structure because of the existence of a thin P layer deposited on the InP surface. The barrier height increases to 0.65 eV and the reverse current is reduced by more than two orders of magnitude compared with the case of Schottky junctions without photolytic treatment. The Richardson constant of the novel Schottky junction is evaluated as 0.126 A cm-2 K-2 from the temperature dependence of the saturation current.