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Low threshold current GaInAs/AlInAs ridge MQW lasers with InP cladding layers

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3 Author(s)
Kawamura, Y. ; NTT Optoelectron Labs., Kanagawa, Japan ; Nonaka, K. ; Mikami, O.

GaInAs/AlInAs ridge MQW lasers with InP cladding layers were fabricated by molecular beam epitaxy. The threshold current is as low as 60 mA and the lasing wavelength is 1.52 μm under pulsed conditions. The use of InP cladding layers made it possible to realise narrow-stripe-width ridge MQW lasers with low threshold currents. The characteristic temperature T0 is 88 K, which was greater than those reported for GaInAsP double heterostructure lasers in the 1.5 μm wavelength region

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Electronics Letters  (Volume:24 ,  Issue: 10 )