By Topic

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Arzberger, M. ; Walter Schottky Inst., Tech. Univ. Munchen, Germany ; Lohner, M. ; Bohm, G. ; Amann, M.-C.

A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3×106 Ω cm2

Published in:

Electronics Letters  (Volume:36 ,  Issue: 1 )