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Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

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4 Author(s)
Arzberger, M. ; Walter Schottky Inst., Tech. Univ. Munchen, Germany ; Lohner, M. ; Bohm, G. ; Amann, M.-C.

A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3×106 Ω cm2

Published in:

Electronics Letters  (Volume:36 ,  Issue: 1 )