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AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

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9 Author(s)
Shelton, B.S. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Huang, J.J. ; Lambert, D.J.H. ; Zhu, T.G.
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Heterojunction bipolar transistors based on aluminium gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterised. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n+-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al0.1 G0.9N emitter with n+-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature

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Electronics Letters  (Volume:36 ,  Issue: 1 )