By Topic

Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ohiso, Y. ; NTT Photonics Lab., Kanagawa, Japan ; Iga, R. ; Kishi, K. ; Amano, C.

Thin-film wafer fusion has been used to fabricate 1.55 μm buried-heterostructure long-wavelength vertical-cavity surface-emitting laser (LW-VCSELs) with InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. Room-temperature continuous-wave operation of the LW-VCSELs has been achieved with a threshold current of 2.1 mA at 25°C

Published in:

Electronics Letters  (Volume:36 ,  Issue: 1 )