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Browse Journals & Magazines > Electronics Letters ...> Volume:36 Issue:1 Help

Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs

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4 Author(s)
Ohiso, Y. ; NTT Photonics Lab., Kanagawa, Japan ; Iga, R. ; Kishi, K. ; Amano, C.

Thin-film wafer fusion has been used to fabricate 1.55 μm buried-heterostructure long-wavelength vertical-cavity surface-emitting laser (LW-VCSELs) with InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. Room-temperature continuous-wave operation of the LW-VCSELs has been achieved with a threshold current of 2.1 mA at 25°C

Published in:
Electronics Letters  (Volume:36 ,  Issue: 1 )

Date of Publication: 6 Jan 2000

Page(s):
39 - 40
ISSN :
0013-5194
INSPEC Accession Number:
6491698
Digital Object Identifier :
10.1049/el:20000055
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
6 Jan 2000
Sponsored by :
Institution of Engineering and Technology

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