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Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs

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4 Author(s)
Ohiso, Y. ; NTT Photonics Lab., Kanagawa, Japan ; Iga, R. ; Kishi, K. ; Amano, C.

Thin-film wafer fusion has been used to fabricate 1.55 μm buried-heterostructure long-wavelength vertical-cavity surface-emitting laser (LW-VCSELs) with InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. Room-temperature continuous-wave operation of the LW-VCSELs has been achieved with a threshold current of 2.1 mA at 25°C

Published in:

Electronics Letters  (Volume:36 ,  Issue: 1 )

Date of Publication:

6 Jan 2000

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