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Ultra-low power source coupled FET logic gate configuration in GaAs MESFET technology

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6 Author(s)
Bushehri, E. ; Microelectron. Centre, Middlesex Univ., London, UK ; Bratov, V. ; Starosselski, V. ; Schlichter, T.
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A source coupled FET logic gate configuration is proposed for achieving high speed and low power dissipation. A frequency of 2.4 GHz has been achieved, based on measurements on a divide-by-20 frequency divider, dissipating only 12 mW from a single 2 V power supply. The performance of the gate in terms of speed is comparable to that of the previously reported high speed source coupled FET logic while dissipating a fraction of the power

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Electronics Letters  (Volume:36 ,  Issue: 1 )