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Effect of statistical variation on threshold voltage in narrow-channel MOSFETs

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3 Author(s)
Li, E.H. ; Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK ; Liu, C.K. ; Ng, H.C.

The first statistical variation analysis in narrow-channel MOSFETs with field oxide isolation structure is presented. The variation of the threshold voltage induced by Gaussian distributed device process parameters such as channel width, doping concentration, interface fixed oxide charges, and gate oxide thickness is investigated by simulation.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 17 )