By Topic

Effect of statistical variation on threshold voltage in narrow-channel MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
E. H. Li ; Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK ; C. K. Liu ; H. C. Ng

The first statistical variation analysis in narrow-channel MOSFETs with field oxide isolation structure is presented. The variation of the threshold voltage induced by Gaussian distributed device process parameters such as channel width, doping concentration, interface fixed oxide charges, and gate oxide thickness is investigated by simulation.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 17 )