Cart (Loading....) | Create Account
Close category search window
 

Monolithic integration of 1.5 mu m optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Wake, D. ; British Telecom Res. Labs., Ipswich, UK ; Judge, S.N. ; Spooner, T.P. ; Harlow, M.J.
more authors

The monolithic integration of a semiconductor laser optical preamplifier and an edge-coupled PIN photodiode has been demonstrated for the first time. Although the fabrication involved is relatively simple, a maximum gain (excluding input coupling loss) of 20 dB and a 3 dB bandwidth of 35 GHz has been measured for this device.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 15 )

Date of Publication:

19 July 1990

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.